symbol v ds v gs i dm t j , t stg symbol typ max 28 40 54 75 r q j l 21 30 m aximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q j a c/w c/w absolute maximum ratings t a =25c unless otherwise noted v v 12 pulsed drain current b power dissipation t a =25c g ate-source voltage drain-source voltage maximum junction-to-ambient a steady-state 13.7 9.7 60 continuous drain current a maximum u nits parameter t a =25c t a =70c 3 0 w junction and storage temperature range a p d c 3 .1 2 -55 to 150 t a =70c i d AO4420 30v n-channel mosfet product summary v ds (v) = 30v i d = 13.7a (v gs = 10v) r ds(on) < 10.5m w (v gs = 10v) r ds(on) < 12m w (v gs = 4.5v) 1 00% uis tested 100% rg tested general description the AO4420 uses advanced trench technology to p rovide excellent r ds(on) , shoot-through immunity a nd body diode characteristics. this device is suitable for use as a synchronous switch in pwm applications. soic-8 top view bottom view d d d d s s s g g d s alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4420 symbol min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 0.6 1.1 2 v i d(on) 40 a 8.3 10.5 t j =125c 12.5 15 9.7 12 m w g fs 30 37 s v sd 0.76 1 v i s 5 a dynamic parameters c iss 3656 4050 pf c oss 256 pf c rss 168 pf r g 0.86 1.1 w switching parameters q g (4.5v) 30.5 36 nc q gs 4.6 nc q gd 8.6 nc t d(on) 5.5 9 ns t r 3.4 7 ns t d(off) 49.8 75 ns t f 5.9 11 ns t rr 22.5 28 ns q rr 12.5 16 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge body diode reverse recovery charge i f =13.7a, di/dt=100a/ m s v gs =0v, v ds =0v, f=1mhz turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.1 w , r gen =3 w turn-off fall time body diode reverse recovery time total gate charge input capacitance i f =13.7a, di/dt=100a/ m s on state drain current forward transconductance diode forward voltage i s =1a,v gs =0v v gs =4.5v, v ds =5v turn-on delaytime v gs =4.5v, v ds =15v, i d =13.7a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage drain-source breakdown voltage i d =250 m a, v gs =0v zero gate voltage drain current gate-body leakage current v ds =v gs i d =250 m a v ds =24v, v gs =0v v ds =0v, v gs = 12v r ds(on) static drain-source on-resistance m w v gs =4.5v, i d =12.7a v gs =10v, id=13.7a gate source charge gate resistance reverse transfer capacitance v ds =5v, i d =13.7a output capacitance maximum body-diode continuous current v gs =0v, v ds =15v, f=1mhz a: the value of r q j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the v alue in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q j a is the sum of the thermal impedence from junction to lead r q j l and lead to ambient. d . the static characteristics in figures 1 to 6 are obtained using 80 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa c urve provides a single pulse rating. rev 8 : nov 2010 alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4420 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =2.0v v gs =2.5v 4.5v 10v 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 6 7 8 9 10 11 12 0 5 10 15 20 25 30 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =10v v gs =4.5v 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v i d =13.7a v gs =10v 0 5 10 15 20 25 30 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c i d =13.7a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4420 typical electrical and thermal characteristics 0 1 2 3 4 5 0 10 20 30 40 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =15v i d =13.7a 100 1000 10000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0.1 1 10 100 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) i d (a) t j(max) =150c t a =25c r ds(on) limited 10 m s 10ms 1ms 0.1s 1s 10s dc 100 m s 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedence z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d alpha & omega semiconductor, ltd. nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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